SiC Power Devices & Modules
SILICON CARBIDE DISCRETE MOSFETS
Create power conversion systems having improved efficiency and lower operating temperatures with our high voltage, high-switching frequency SiC MOSFETs.
Coherent SIC MOSFETs provide superior energy efficiency and performance over existing silicon devices are the only product available with a 200°C junction temperature capability, along with industry-leading avalanche ratings and superior RDS(on).
SILICON CARBIDE MOSFETS FEATURES
High voltage and low RDS(on) up to 200°C.
Fast switching enabled by ultra-low gate resistance.
Very low, temperature invariant switching losses.
Avalanche ruggedness superior to silicon
Fast recovery body diode for synchronous rectification.
SiC Substrates
| n-type Silicon Carbide Material Properties | |
|---|---|
| Physical Characteristics | |
| Structure | Hexagonal, Single Crystal |
| Diameter | Up to 200 mm |
| Grades | Prime, Development, Mechanical |
| Physical Characteristics | |
| Structure | Hexagonal, Single Crystal |
| Diameter | Up to 200 mm |
| Grades | Prime, Development, Mechanical |
| Physical Characteristics | |
| Structure | Hexagonal, Single Crystal |
| Diameter | Up to 200 mm |
| Grades | Prime, Development, Mechanical |
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