Silicon Carbide Bare Die Mosfets

SiC Power Devices & Modules

SILICON CARBIDE BARE DIE MOSFETS

Build power electronics for the most demanding automotive applications using the unrivaled efficiency, frequency, temperature, and voltage capabilities of SiC.

Coherent SiC bare die MOSFETs use a proven technology platform (licensed from GE Aviation Systems) to deliver industry-leading FIT rates. They are AEC-Q101 rated for automotive applications and offer industry-leading 200 °C junction temperature capability

BARE DIE SILICON CARBIDE MOSFETS FEATURES

High voltage and low R_DS(on) up to 200 ° C.
Fast switching enabled by ultra-low gate resistance.
Very low, temperature invariant switching losses.
Avalanche ruggedness superior to silicon
Fast recovery body diode for synchronous rectification.

Datasheets

SiC Substrates

n-type Silicon Carbide Material Properties
Physical Characteristics
Structure	Hexagonal, Single Crystal
Diameter	Up to 200 mm
Grades	Prime, Development, Mechanical
Physical Characteristics
Structure	Hexagonal, Single Crystal
Diameter	Up to 200 mm
Grades	Prime, Development, Mechanical
Physical Characteristics
Structure	Hexagonal, Single Crystal
Diameter	Up to 200 mm
Grades	Prime, Development, Mechanical

Silicon Carbide Discrete MOSFETS

Create power conversion systems having improved efficiency and lower operating temperatures with Coherent high-voltage, high switching frequency SiC MOSFETs.

Silicon Carbide Power Modules

Take full advantage of the unique performance capabilities of SiC power electronics with a broad range of modules in industry standard and optimized footprints from Coherent.