SiC Substrates & Epitaxy
SiC FOR RF ELECTRONICS
Scale up the production of GaN-on-SiC RF power amplifiers and other RF and microwave devices with our high-quality semi-insulating SiC substrates.
Coherent has pioneered the development of large-diameter, semi-insulating SiC substrates, and delivers high resistivity material to enable fabrication of components with low power dissipation, high frequency operation, and good thermal stability
SEMI-INSULATING SILICON CARBIDE MATERIAL PROPERTIES
Coherent continuously improves our materials quality and increases substrate diameters to enable our customers to increase device performance and lower costs.
SiC Substrates
| Semi-Insulating Silicon Carbide Material Properties | |
|---|---|
| Physical Characteristics | |
| Structure | Hexagonal, Single Crystal |
| Diameter | Up to 200 mm |
| Grades | Prime, Development, Mechanical |
| Physical Characteristics | |
| Structure | Hexagonal, Single Crystal |
| Diameter | Up to 200 mm |
| Grades | Prime, Development, Mechanical |
| Physical Characteristics | |
| Structure | Hexagonal, Single Crystal |
| Diameter | Up to 200 mm |
| Grades | Prime, Development, Mechanical |
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