SiC Power Devices & Modules
SILICON CARBIDE BARE DIE MOSFETS
Build power electronics for the most demanding automotive applications using the unrivaled efficiency, frequency, temperature, and voltage capabilities of SiC.
Coherent SiC bare die MOSFETs use a proven technology platform (licensed from GE Aviation Systems) to deliver industry-leading FIT rates. They are AEC-Q101 rated for automotive applications and offer industry-leading 200 °C junction temperature capability
BARE DIE SILICON CARBIDE MOSFETS FEATURES
- High voltage and low RDS(on) up to 200 ° C.
- Fast switching enabled by ultra-low gate resistance.
- Very low, temperature invariant switching losses.
- Avalanche ruggedness superior to silicon
- Fast recovery body diode for synchronous rectification.
SiC Substrates
| n-type Silicon Carbide Material Properties | |
|---|---|
| Physical Characteristics | |
| Structure | Hexagonal, Single Crystal |
| Diameter | Up to 200 mm |
| Grades | Prime, Development, Mechanical |
| Physical Characteristics | |
| Structure | Hexagonal, Single Crystal |
| Diameter | Up to 200 mm |
| Grades | Prime, Development, Mechanical |
| Physical Characteristics | |
| Structure | Hexagonal, Single Crystal |
| Diameter | Up to 200 mm |
| Grades | Prime, Development, Mechanical |
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